John Wasserbauer, Ph.D., is a technology specialist who focuses on a broad range of technologies and industries, including semiconductors, electrical and computer engineering, material science, 3D printing and additive manufacturing, solid-state physics, optics and photonics, microelectromechanical systems, microfluidics, sensors, fiber optics, connectors, data communications and telecommunications.
John has published in several peer-reviewed journals such as Electronics Letters and IEEE Journal of Quantum Electronics and presented numerous conference papers. His work involves technologies such as photonics (e.g. edge emitting and mode-locked lasers), fiber-optic communications (e.g. multi-fiber connectors), III-V materials (e.g. GaN-on-diamond), and optical sensors (e.g. InSb-based focal plane arrays).
Prior to joining Wasserbauer Law, he had management roles in fabrication and research laboratories developing next generation connectors, optical engines, data links, and sensors, the creation of the world’s first GaN-on-diamond wafers for high-speed, high-power HEMTs, and MEMS-on-glass technology, integrated microfluidics, fiber-based medical sensors, and optical couplers for chip-to-chip data communication links. John is the inventor of 12 US and international patents and patents pending.
In his leisure time John enjoys running, cooking, and backpacking.
Education
- Doctor of Philosophy
Electrical and Computer Engineering, University of California, Santa Barbara
Dissertation title: “Design and fabrication of high-speed, 1.55 µm semiconductor lasers” - Diplôme D’Études Approfondit (French Masters)
Electrical Engineering, École Central de Lyon, Lyon, France
Master’s Thesis title: “Growth of GaAs on Si Substrates Using MOCVD” - Bachelor of Science
Materials Science and Engineering, Cornell University, Ithaca, NY
Technical Publication
- J Wasserbauer & J. Gottmann (2021). “3.5 D laser printing opens the door to low-cost, precision glass components,” LASER FOCUS WORLD, 57(7), 36-38.
- J. Wasserbauer, F. Faili, D. Babic, D. Francis, F. Ejeckam, G.D. Via, J.K. Gillespie, B. Winningham, G.H. Jessen, J. Blevins, J.G. Felbinger, M.V.S. Chandra, Y. Sun, and L.F. Eastman, “Gallium Nitride on Diamond Semiconductors for Improved Thermal Management” Defense Man. Conf., Orlando, FL, December 3, 2008.
- J. Wasserbauer, F. Faili, D. Babic, D. Francis, F. Ejeckam, “Progress toward the processability of GaN-on-diamond wafers,” IMAPS Conf., Lincicum Heights, MD, April 30, 2008.
- J. Wasserbauer, F. Faili, D. Babic, D. Francis, F. Ejeckam, “Diamond cools high-power transistors,” Compound Semicond. Nov. 2007.
- J.G Felbinger, M.V.S. Chandra, Y. Sun, L.F. Eastman, J. Wasserbauer, F. Faili, D. Babic, D. Francis, and F. Ejeckam, “Comparison of GaN HEMTs on diamond and SiC substrates,” IEEE Electron Device Letters, 28 (11), pp. 948-950, 2007.
- D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer and J. E. Bowers, “Short pulse generation using multisegment mode-locked semiconductor lasers,” in IEEE Journal of Quantum Electronics, vol. 28, no. 10, pp. 2186-2202, Oct. 1992, doi: 10.1109/3.159527.
